China Narrows DRAM Gap to 3 Years, HBM to 4 Years
Chosun Ilbo's detailed investigation revealed CXMT has closed the DRAM manufacturing gap to approximately 3 years behind Samsung/SK Hynix — down from the 5+ years estimated as recently as 2024 — and the HBM (High Bandwidth Memory) gap to approximately 4 years. The compression is faster than the Korean semiconductor industry publicly acknowledged. For SK Hynix investors, the HBM moat was the core valuation thesis supporting the premium multiple; if China can commercially produce HBM within 4 years, the addressable market premium shrinks dramatically. This is a structural re-rating event, not a sentiment correction.
Read at Chosun Ilbo ↗